In IGBT, charge carrier concentration at emitter side in n-base layer is low as saturation voltage.
2.
By contrast, the standard two-transistor mirror operates down to the saturation voltage of its output transistor.
3.
This allows the voltage drop from the unregulated voltage to the regulated voltage to be as low as the saturation voltage across the transistor.
4.
Carrier distribution in n-base is similar to that of saturation bipolar transistor and low saturation voltage of MCS, even at high voltage ratings, can be achieved.
5.
Trouble is, you need to produce a voltage exceeding the saturation voltage of the transistor ( V CEsat ) and a few 10's of microamps for it to work.
6.
An additional complication is that liquids also exhibit a saturation phenomenon : after certain voltage, the saturation voltage, the further increase of voltage will not change the contact angle, and with extreme voltages the interface will only show instabilities.
7.
Since the circuit was biased for high frequency operation ( \ scriptstyle V _ { BE } ~ \ ge ~ 0.7 ), this represents a saturation voltage for Q3 of 0.1 to 0.2 volts.
8.
The transistor is designed so that its collector saturation voltage ( ) is less than the base emitter voltage ( roughly 0.6 V ) minus the Shottky diode's forward voltage drop ( roughly 0.2 V ).
9.
A July 2008 press release states the PET plastic matrix allows for better crystal polarization and that this " along with other proprietary processing steps provides the potential of a polarization saturation voltage required by EEStor, Inc . " The patent states this is done at 180 �C with 4000 V.
10.
Even in a transistorised amplifier with hard clipping, the gain of the transistor will be reducing ( leading to nonlinear distortion ) as the output current increases and the voltage across the transistor reduces close to the saturation voltage ( for bipolar transistors ), and so " full power " for the purposes of measuring distortion in amplifiers is usually taken as a few percent " below " clipping.
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